Abstract
We fabricated Ni films on an Acrylonitrile-Butadiene-Styrene resin (ABS) using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effect of ion irradiation controlled by target DC power PT and magnetic flux density toward the substrate BC on the Ni film structures was investigated. Argon ion emission intensity IArII near the substrate increased with PT and BC. In addition, substrate current IS drastically decreased above PT=500 W. We observed that ion irradiation was enhanced by increasing BC above PT=500 W. From x-ray diffraction measurement, the crystallite size t(111) increased with the effect of ion irradiation. A minimum film resistivity of 1.4×10−5 Ωcm was measured for PT=600 W and BC=5 mT. We conclude that controlling the effect of ion irradiation is effective for high quality Ni film formation on ABS.
