Abstract
We fabricated Ni films on a Polyimide (PI) film and an Acrylonitrile-Butadiene-Styrene (ABS) resin substrate using unbalanced magnetron sputtering assisted by inductively coupled plasma. For the PI film, the effect of ion irradiation was controlled by substrate DC bias VS and magnetic flux density toward the substrate BC. For the ABS resin substrate, the effect of ion irradiation was controlled by target DC power PT and magnetic flux density toward the substrate BC. For each substrate, we investigated the effect of ion irradiation on the Ni film structures in detail. The effect of ion irradiation E was estimated by measured physical quantities with respect to sputtered atom flux, ion flux and ion energy. From x-ray diffraction measurement, the crystallite size t(111) increased with the effect of ion irradiation. Minimum film resistivities of 9.0×10−6 and 1.4×10−5 Ωcm were measured for BC=3 mT and E=0.24 on the PI film and BC=5 mT and E=0.98 on the ABS resin substrate, respectively. We conclude that controlling the effect of ion irradiation is effective for high quality Ni film formation on the PI film and the ABS resin substrate.
