Properties of an Al₂O₃ film by low temperature ALD method using high purity ozone and ethylene.

Abstract

A thin film deposition technology at room temperature is required for a device manufacturing process on a flexible substrate with low heat resistance used in the field of flexible electronics such as organic EL display. Applying the room temperature CVD and ALD deposition method using mixed gas of high purity ozone and ethylene (C₂H₄) reported previously, We report the film quality of Al₂O₃ thin films prepared using trimethylaluminum (TMA) as a precursor.