Influence of nitrogen gas flow ratio on GaN film growth using high-density convergent plasma sputtering device at room temperature

Abstract

GaN film growth characteristics have been investigated by using newly developed high-density convergent plasma sputtering device with the liquid Gallium target and the nitrogen plasma irradiation. We especially focus on the nitrogen gas flow ratio in Ar-N₂ mixed gas to investigate GaN film growth characteristics. The X-ray diffraction measurement was used to evaluate crystal orientation of deposited films. In this presentation, we will present the influence of the nitrogen gas flow ratio on GaN film growth using high-density convergent plasma sputtering device at room temperature.