Characterization of mist chemical vapor deposited Al₂O₃ thin films and its applications in GaN-based MIS-HEMTs

Abstract

Al₂O₃ thin films, as an attractive candidate for insulated gate for GaN-based metal-insulator-semiconductor (MIS) structures, were synthesized by cost-effective mist chemical vapor deposition (CVD) technique. The properties of deposited Al₂O₃ thin films are comparable to those reported from high-quality amorphous Al₂O₃ thin films deposited by atomic layer deposition method. In addition, we fabricated AlGaN/GaN MIS diodes using Al₂O₃ gate insulator mist-CVD technique. Capacitance–voltage investigations indicated high quality of the resulting mist-Al₂O₃/AlGaN interfaces.