Surface reactions of 2D materials controlled by field-effect transistors

Abstract

Two-dimensional (2D) materials that can be obtained by exfoliation of layered crystals are very sensitive to surface phenomena owing to their ultimate thinness. Their ultrathin body enables us to control the entire body by means of a field-effect-transistor (FET) configuration because the gate electric field penetrates to the top-most surface. Thus, it is expected that surface phenomena are controllable by means of FETs with a channel of 2D materials. In this talk, among various gate-controlled surface phenomena, gate-controlled chemical reactions will be discussed based on chemical modification of an archetypal 2D material, graphene.