Evolution of atomic and electronic structure of double-layer In by Mg deposition

Abstract

We have studied the evolution of atomic and electronic structure of the double-layer indium on Si(111) induced by Mg deposition using LEED, STM and ARPES. We found that two new phases, (2√3 × 2√3) (Mg coverage 0.2 ML) and (√3 × √3) (1 ML), are formed. Both phases have 2D nearly-free-electron band structures. The band structure of the (√3 × √3) phase is reproduced by three-atomic-layer models.