Electronic structure of Bi(110) ultra-thin films grown on Si(111)√3 × √ 3-B substrates

Abstract

The band dispersion of Bi(110) ultra-thin films on Si(111)√3 × √3-B substrates shifted to a low binding energy side of about 100 meV compared to the band dispersions of the free standing Bi(110) ultra-thin films by calculation. This suggests the hole doping to the film from a heavily boron doped p-type Si(111) substrate. In this study, the electronic states of Bi(110) ultra-thin films on n-type and p-type Si(111)√3 × √3-B substrates were compared, and as a result, the energy shift of band dispersion was confirmed. This is thought to be due to charge transfer between the substrate and the Bi(110) ultra-thin films.