Characterization of deep interface states in SiO₂/B-doped CVD diamond using the transient photocapacitance method

Abstract

The SiO₂/B-doped diamond interface was characterized using a transient photocapacitance technique. We could observe the increase in the signal intensity owing to photon irradiation in the energy range above 1.2 and 1.5 eV. It is considered that the former is due to the acceptor-type defect in the depletion layer of the diamond MOS diode. On the other hand, the latter has not been reported previously and is expected to be due to an interface state of the SiO₂/B-doped diamond.