Abstract
SiC films were deposited on silica substrates by applying the PPCVD (Particle Precipitation-Aided Chemical Vapor Deposition) method using reactant gas mixtures of SiH4 and C6H6 at 1400°C. The deposited films were β-SiC. The maximum growth rate was 190 nm/s. This was 1 order of magnitude greater than that achieved by con-ventional CVD processes.
As the total pressure was decreased, using Ar as the inert gas and keeping the partial pressure of each reactant gas constant, film growth rates increased and particle formation was suppressed. It was found that the ratio of film deposition to particle formation can be controlled by changing the total pressure in CVD processes.
By comparing the deposition rate profile of SiC deposited using SiH4+C6 H6with those of Si and C deposited using SiH4 and C6H6 respectively, the gas-phase chemical interactions of SiH4 and C6H6 were revealed. The existence of SiH4 molecule promoted C6 H6 decompositions. The deposition rates of carbon, which is in SiC form, produced from the mixture of SiH4 and C6H6 were much faster than those produced from C6 H6.
