KAGAKU KOGAKU RONBUNSHU
Online ISSN : 1349-9203
Print ISSN : 0386-216X
ISSN-L : 0386-216X
Modeling of Hot Wall Type CVD Reactor for Prototype Design
KOUZI OHKIYASUYUKI EGASHIRAHIROSHI KOMIYAMA
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2000 Volume 26 Issue 6 Pages 798-803

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Abstract

CFD simulation of a hot wall type CVD reactor with a shower head gas supply is carried out as numerical experiments for a wide range of reaction conditions and rate constants. The results of these numerical experiments are summarized into equations of dimensionless numbers, and these empirical equations can be applied to quick estimation of growth rate and its dependency on operating conditions.
For the reaction scheme of direct deposition of source gas, growth rate, G.R., is expressed as follows,
whereδ, the thickness of the concentration boundary layer is
In the case of deposition of intermediate species produced in gas phase reaction, G.R., is expressed as follows,
whereδR, the thickness of heating zone above the substrate is
Here, W is the distance between substrate and shower head, Re is Reynolds number based on W, Sc is Schmidt number, Le is Lewis number, Ts is substrate temperature, T0 is inlet gas temperature, ks is surface reaction rate constant, D and Ds are diffusion coefficient at T0 and Ts respectively, kg0 and Ea are pre-exponential factor and activation energy of gas phase reaction respectively, Rg is gas constant and C0 is inlet source gas concentration.

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© by THE SOCIETY OF CHEMICAL ENGINEERS, JAPAN
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