Detection of Individual Dopant Atoms and Clusters in the Doped Silicon Crystal

Abstract

Dopnat clusters in silicon crystal has been reported to have an influence on the electronic properties. In order to clarify the existence of the cluster, it is necessary to observe it at a three-dimensional atomic level. Recently, aberration corrected electron microscope has been developed, which has been expected to improve not only transverse resolution but also depth resolution. Using our developed microscopy, R005, we found two dopant atoms facing each other in a six-member ring as the cluster.