2010 Volume 45 Issue 4 Pages 268-272
Dopnat clusters in silicon crystal has been reported to have an influence on the electronic properties. In order to clarify the existence of the cluster, it is necessary to observe it at a three-dimensional atomic level. Recently, aberration corrected electron microscope has been developed, which has been expected to improve not only transverse resolution but also depth resolution. Using our developed microscopy, R005, we found two dopant atoms facing each other in a six-member ring as the cluster.