2010 Volume 2 Pages 89-92
A transparent electrode of Si doped B-Ga2O3 films for solar cells, flat panel displays and other devices, which consist in chemically abundant and ecological elements of gallium and oxygen, were grown on quarts or silicon substrate by RF magnetron sputtering using sintered Ga2O3 and Si target. Unfortunately, the conductivity of Si doped B-Ga2O3 film does not increase by Si doping. However, the B-Ga2O3 energy gap increases with increasing Si concentration in the deposited film. From X-ray photoelectron spectroscopy (XPS) measurement, peaks correlated with oxygen, gallium and silicon are observed. The Io/IGa XPS peak ratio decreases with increasing Si concentration. It could be said that the oxidation of gallium became weaken with Si doping.
