抄録
It has been known that thin silica films can be deposited from TEOS {Si(OC2H5)4} by means of the photo-CVD (Chemical Vapor Deposition) technique using vacuum ultraviolet (VUV) light (VUV-CVD) at room temperature. In this study, in order to develop an advanced technique for this method, we have attempted thin silica film deposition at atmospheric pressure. TEOS was introduced at a partial pressure of 1-2 Torr and the total pressure was adjusted to atmospheric pressure using N2. In the case of deposition at room temperature, many particles with diameters of 1-3 μm were observed on the surface of the deposited films via scanning electron microscopy. By increasing the temperature of the substrate in the range of 50-100 °C, a flat film was successfully obtained. An FT-IR measurement revealed the main component of the deposited films was silica. It was demonstrated that the fabrication of silica film by means of VUV-CVD at atmospheric pressure is possible.
