Abstract
We describe properties of laser produced plasmas (LPP) for extreme ultra violet (EUV) light source for next generation lithography as an industrial application of LPP. We briefly present three topics related to the LPPEUV light source; laser intensity dependence of conversion efficiency from laser light to EUV light with 13.5nm wavelength with 2% bound width with tin target, present understanding of EUV emission from xenon target, and atomic processes in those targets.
