Abstract
The fabrication and evaluation of an UV light-emitting diode (LED) with GaN quantum dots as the active layer is demonstrated. GaN quantum dots were fabricated on an AlxGa1-xN (x ~ 0.1) surface using Si antisurfactant. The Si antisurfactant exposed to the AlxGa1-xN surface prior to GaN enables quantum dot formation on a surface where growth in the Stranski-Krastanov mode is impossible. Fairly high density of dots (1010-1011 cm-2) with controllable dot sizes can be achieved. By current injection (cw) to the LED structure including GaN quantum dots clear room temperature luminescence at 360 nm was observed. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
