The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 32, Issue 6
Displaying 1-9 of 9 articles from this issue
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Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors
Special Issue
Laser Review
  • Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors to Hand The True History of Nitride Research Down to Future Generation - The Role of Educators and Researchers -
    Yoichi KAWAKAMI
    2004 Volume 32 Issue 6 Pages 386
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.386
    JOURNAL FREE ACCESS
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  • High Efficiency UV Light Emitter Using High-Crystalline-Quality AlGaN
    Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI
    2004 Volume 32 Issue 6 Pages 387-391
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.387
    JOURNAL FREE ACCESS
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    We demonstrated the UV-light-emitting diode on the low dislocation density AlGaN. This new UV-light-emitting diode shows peak wavelength of 363 nm and output power of 4.7 mW at 100 mA DC current injection.
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  • Advanced Development of GaN-Based UV-LED and UV-LD
    Daisuke MORITA, Shingo MASUI, Shin-ichi NAGAHAMA, Takashi MUKAI
    2004 Volume 32 Issue 6 Pages 392-396
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.392
    JOURNAL FREE ACCESS
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    GaN-based ultraviolet (UV) light emitting diodes (LEDs) and UV laser diodes (LDs) were grown by a metalorganic chemical vapor deposition method. We reduced the self-absorption of emission light in UV-LED chips by removing the GaN templates and the sapphire substrates. In the case of UV-LDs, Al mole fraction in AlGaN layers was optimized. As a result, we succeeded in fabricating 365 nm UV-LEDs and UV-LDs which are useful for various industrial uses because of the same wavelength as i-line of high-pressure mercury vapor lamps.
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  • GaN-Free Ultraviolet Light Emitting Diodes Grown on High Quality AlN
    Toshio NISHIDA
    2004 Volume 32 Issue 6 Pages 397-401
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.397
    JOURNAL FREE ACCESS
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    AlGaN-based light emitting diodes (LEDs) are expected to be the next-generation ultraviolet light (UV) sources. With the aim of achieving AlGaN-based UV-LEDs comparable to conventional blue and red LEDs, we have investigated regular epitaxial growth, the fabrication of uniform and abrupt heterointerfaces, the optical characteristics of AlGaN-based quantum structures, the validity of band engineering, p-n junction designs, radiative recombination, and light extraction. Efficient and transparent UV-LEDs grown on a high-quality AlNtemplate layer on a sapphire substrate have been fabricated. We also discuss the potential of bulk AlN substrate.
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  • Short Wavelength and High-Efficiency Operation of Deep UV LED Using Quaternary InAlGaN
    Hideki HIRAYAMA, Katsushi AKITA, Takashi KYONO, Takao NAKAMURA, Yoshin ...
    2004 Volume 32 Issue 6 Pages 402-409
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.402
    JOURNAL FREE ACCESS
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    High-efficiency ultraviolet (UV) light sources, i.e., UV light-emitting diodes (LEDs) or laser diodes (LDs), are very attractive for application to white lighting, high-density memories, medical fields, etc. We have demonstrated that 300-350 nm UV emission is considerably enhanced by the introduction of several percent of In into AlGaN due to an In-segregation effect. We fabricated InAlGaN-based deep UV LEDs on sapphire substrate that had an emission wavelength at 308-314 nm, and we obtained sub-milliwatt output power under pulsed operation. We also fabricated InAlGaN-based quantum-well (QW) LEDs on GaN substrates in order to eliminate the effects of threading dislocations. We achieved a remarkable increase in output power by using a GaN substrate instead of sapphire substrates. As a result, the maximum UV output power obtained was as high as 3.8 mW at 351nm and 6.3 mW at 358 nm under room temperature (RT) CW operation.
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  • GaN Quantum Dot UV-LED-Fabrication and Optical Characteristics
    Satoru TANAKA, Jeong-Sik LEE, Peter RAMVALL, Hiroaki OKAGAWA
    2004 Volume 32 Issue 6 Pages 410-413
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.410
    JOURNAL FREE ACCESS
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    The fabrication and evaluation of an UV light-emitting diode (LED) with GaN quantum dots as the active layer is demonstrated. GaN quantum dots were fabricated on an AlxGa1-xN (x ~ 0.1) surface using Si antisurfactant. The Si antisurfactant exposed to the AlxGa1-xN surface prior to GaN enables quantum dot formation on a surface where growth in the Stranski-Krastanov mode is impossible. Fairly high density of dots (1010-1011 cm-2) with controllable dot sizes can be achieved. By current injection (cw) to the LED structure including GaN quantum dots clear room temperature luminescence at 360 nm was observed. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
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  • Short Wavelength LED Based on III-V Nitride and Its Applications
    Shota SHIMONISHI, Hisao YAMAGUCHI, Naoki SHIBATA
    2004 Volume 32 Issue 6 Pages 414-417
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.414
    JOURNAL FREE ACCESS
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    Short wavelength LED (TG Purple) based on III-V nitride semiconductors is established in addition to blue and green. This short wavelength LED is realized by adjusting “Indium” chemical content of the well layer. Light output power of “TG Purple” is high and FWHM (full width at half maximum) is narrow. “TG Purple” is applied to light source of white LED (TG True White Hi). Combination of “TG Purple” and various phosphors can generate white light with high luminous intensity and good color rendering. “TG True White Hi” can realize various color temperature by adjusting phosphor combinations. Further “TG True White Hi” shows stable characteristics against operating current and temperature. “TG True White Hi” is very attractive device for both academic and industrial applications. New applications for “TG True White Hi” will be explored.
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Regukar Paper
Laser Original
  • High Efficiency Amplifier for Single-Mode CW Dye Laser
    Tatsuki OKAMOTO, Ichiro KOBAYASHI, Syuichi FUJITA, Ichiro YAMASAKI, Ka ...
    2004 Volume 32 Issue 6 Pages 418-422
    Published: June 15, 2004
    Released on J-STAGE: January 12, 2010
    DOIhttps://doi.org/10.2184/lsj.32.418
    JOURNAL FREE ACCESS
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    A high power, tunable dye laser system composed of a master oscillator and power amplifiers is demonstrated. A single-mode cw dye laser oscillator of simple composition generates a narrow-bandwidth spectrum of less than 20 MHz compared with that of a pulse dye laser oscillator; however, the output power from the cw dye laser is low. Therefore, a high efficiency pre-amplifier for the pulse dye laser is needed. We developed a simulation code to amplify spontaneous emission and also designed a pulse dye laser amplifier to increase efficiency. In experiments, we obtained a power output pulse with a narrow-bandwidth spectrum with a very high power gain greater than 10,000 by using a four-pass pre-amplifier. Good agreement is obtained between the calculated and measured amplifier characteristics.
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