抄録
To detect THz waves, devices that can operate in ultra-low-temperature liquid He are needed in order to suppress thermal noise. We fabricated a simple detection device composed of a thermal sensor of Poly-Si silicided with Ni, a dummy sensor, and a CMOS circuit comparator that is compatible with 0.13-μm CMOS process technology; this is a basic construction for a two-dimensional detection device array. Stable operation of the device in liquid He at a temperature of 5K was confirmed, and using a KTP-OPO source thermal-electrical transformation was observed with a minimum irradiation energy 20μJ/pulse. These results are expected to lead to an overlayed two-dimensional detection device array composed of a CMOS sensor with suitable noise suppression and signal processing features and a thermal sensor.
