抄録
AlInGaN is most attractive material due to a directive semiconductor materials covering wide band
energy ranging 0.8‒6.4 eV. AlInGaN based violet semiconductor laser diodes (LD) is fi rst demonstrated
by Nichia Corporation in 1995. Since it, AlInGaN based LDs device characteristics have been improving
and its lasing wavelength are expand from UV, blue, to green. In this paper, the technology histories of
higher power and longer wavelength GaN based LDs are reviewed. Also, recent high optical power watt
class blue and green LDs characteristics are introduced.
