Abstract
Photonic crystal lasers have attracted much attention because of the feasibility of its small energy cost
operation. An electrically pumped photonic crystal laser in room-temperature continuous-wave
operation is strongly desired. We have developed electrically driven photonic crystal laser employing an
ultracompact active region embedded with InP layer. The device exhibits threshold current of 4.8 μA
and the energy cost of 4.4 fJ/bit at 10-Gbit/s modulation. In addition, we have demonstrated
heterogeneous integration of photonics crystal laser on Si substrate by using buried growth on III-V
template, which is directly bonded on SiO2/Si substrate.
