抄録
Mid infrared wavelength from 2 to 5-micron devices has attracted for gas sensing and new band fiber
optic devices. We developed metal organic vapor phase epitaxy (MOVPE) growth for Sb-contained
III-V materials. Conventional Type-I heterostructure using InAsSb/AlGaAsSb is estimated to have large
band offset. However, it suffers from impurities such as oxygen and carbon into Al-contained materials.
Sb based material should be grown relatively low temperature because of antimony's high vapor
pressure. Therefore, it is not easy to suppress carbon and oxygen concentration. Next, we developed Alfree
InAs/GaAsSb type-II superlattice to emit and absorb midinfrared light. In case of MOVPE, arsenic
is automatically incorporated into GaSb layer and formed GaAsSb layer. Its concentration is depending
on the thickness of GaAsSb layer. It can be controlled and easy to match the lattice matched to InAs
substrate. Photoluminescence was measured at 2 to 5-micron band using InAs/GaAsSb type-II (broken
gap) superlattice.
