抄録
Phase change materials are promising for various kind of photonics applications as well as optical and
electrical memories. Among them, artificially designed GeTe/Sb2Te3 interfacial phase change materials
(iPCMs) have a potential impact on terahertz photonics since iPCM can be a topological material
depending on its multi-layered structure and have unique electronic properties different from
conventional alloy phase change materials. Here, we report on our recent studies including iPCM-based
terahertz detection device, characterization of the multilayered structure by terahertz generation
measurements, and formation of laser induced periodic surface structure (LIPSS) fabricated on a
Ge2Sb2Te alloy film by a intense pulse train derived from a free electron laser.
