抄録
We report InP-based semiconductor lasers integrated on SiO2/Si. By integrating thin film (membrane)
lasers on SiO2, the optical confinement factor of the active layer can be made to be two to three times as
large as that of conventional lasers. Thus, the semiconductor laser can be directly modulated with low
power consumption. It also describes other advantages such as the ability to fabricate a buried heterostructure
and the ability to grow an active layer on a Si substrate, since thin films can be overcome the
problem of the difference of thermal expansion difference between InP and Si.
