Abstract
Recent progress in InGaAIP visible semiconductor lasers is reviewed based, on our results. Since the realization of CW operation of InGaAIP visible semiconductor lasers at room temperature in 1985, a number of improvements have been attained. InGaAIP materials have been confirmed as the key material for the laser diodes in the 0.6μm wavelength region. In gain-guiding structure of InGaAIP laser diodes, high temperature CW operation up to 90°C and low threshold current below 80mA have been obtained with by the optimized laser structure. More than 100 thousand hour stable operation has been expected from accelerating aging tests. In relatively low power operation less than 5mW, the InGaAIP gain-guiding visible lasers are now in the level usable to practical applications. In index-guiding structure, the laser performances, such as the low threshold current, high power operation, reliability and shorter wavelength operation, are discussed.
