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Volume 16, Issue 11
Displaying 1-11 of 11 articles from this issue
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Masayoshi UMENO1988 Volume 16 Issue 11 Pages 722-723
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSDownload PDF (186K) -
Yutaka UEMATSU1988 Volume 16 Issue 11 Pages 724-731
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSRecent progress in InGaAIP visible semiconductor lasers is reviewed based, on our results. Since the realization of CW operation of InGaAIP visible semiconductor lasers at room temperature in 1985, a number of improvements have been attained. InGaAIP materials have been confirmed as the key material for the laser diodes in the 0.6μm wavelength region. In gain-guiding structure of InGaAIP laser diodes, high temperature CW operation up to 90°C and low threshold current below 80mA have been obtained with by the optimized laser structure. More than 100 thousand hour stable operation has been expected from accelerating aging tests. In relatively low power operation less than 5mW, the InGaAIP gain-guiding visible lasers are now in the level usable to practical applications. In index-guiding structure, the laser performances, such as the low threshold current, high power operation, reliability and shorter wavelength operation, are discussed.View full abstractDownload PDF (769K) -
Yoshiaki NAKANO, Kunio TADA1988 Volume 16 Issue 11 Pages 732-740
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSTo utilize excellent spectral characteristics of semiconductor distributed feedback (DFB) lasers in the various fields of optical electronics applications, it is necessary to expand the wavelength range in which their oscillation is available, especially into short wavelength region. Here we describe our effort to develop short wavelength DFB lasers with GaAIAs/GaAs materials. As for 0.88μm range, we have successfully fabricated a high-performance device with very low threshold current by employing buried heterostructure. Introduction of the micro-fabrication techniques such as the reactive ion etching has enabled us to realize a 0.88?Em DFB laser with novel modulated stripe width structure for complete single longitudinal mode oscillation. We have also succeeded in preliminary verification of 0.77μm low threshold room temperature operation in an oxide stripe DFB laser.View full abstractDownload PDF (1219K) -
A Long Cavity T3 LaserAkihiro SHIMA, Hiroshi MATSUBARA, Hisao KUMABE1988 Volume 16 Issue 11 Pages 741-749
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSA 790nm band long cavity T3 laser whose active layer is thinner near the mirror than in the inner region, has been developed for the optical disk system. Because of its T3 structure, the threshold current of the laser does not increase as the beam divergence becomes narrow. In comparison with the laser of a 250μm cavity length, a 350μm long cavity laser reduces a current density and thermal resistance. The beam divergence parallel and perpendicular to the junction plane are 11.5° and 15.5° respectively, and the aspect ratio is 1.35. In spite of such a narrow beam, the laser emits light at over 100mW light output power even at 80°C. The fundamental transverse mode at least up to 120mW and the stable long term operation over 30mW have been demonstrated.View full abstractDownload PDF (928K) -
The Embedding Growth of Highly Resistive Epitaxial Layers by MOVPEShigenobu YAMAKOSHI, Kenya NAKAI1988 Volume 16 Issue 11 Pages 750-757
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSThe epitaxial growth and the selective growth technologies of Fe doped highly resistive InP layers by MOVPE are discussed. As an application, a planner-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer is demonstrated.View full abstractDownload PDF (1355K) -
Takahiro SUYAMA, Masafumi KONDO, Masahiro HOSODA, Toshiro HAYAKAWA, Sa ...1988 Volume 16 Issue 11 Pages 758-766
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSThe high power characteristics of broad stripe gain-guiding quantum well lasers have been investigated. High quality GaAs/AlGaAs quantum wells and quantum well lasers were grown on 0.5° misoriented (111) B GaAs substrates by molecular beam epitaxy. Reduction of the optical density in the laser cavity is effective for increasing the maximum light output of graded index separate confinement heterostructure (GRIN-SCH) type quantum well lasers. The reduction of series resistance by increasing the cavity length, which also reduces the current density, is also effective to increase the maximum light output. The maximum light output of 3.7W has been attained by using small optical confinement in the GRIN region and a long cavity of 750μm.View full abstractDownload PDF (1224K) -
Shigehisa ARAI, Yasuharu SUEMATSU1988 Volume 16 Issue 11 Pages 767-774
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSLong wavelength GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed reflector integrated by bundle-integrated-guide (BIG) structure are reviewed from the points of their fabrication process and operation performances.
The optical coupling efficiency in the BIG structure as well as lasing properties of the BIGD-DBR lasers are discussed from aspects of a low threshold current, a high side-mode-suppression ratio, narrow line-width, and stable single-mode operations under high-speed direct modulation.View full abstractDownload PDF (1312K) -
Ikuo MITO, Mitsuhiro KITAMURA, Shinji TAKANO, Tatsuya SASAKI, Hirohito ...1988 Volume 16 Issue 11 Pages 775-783
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSA quantum-well distributed feedback semiconductor laser with an InGaAsP system has been successfully fabricated by the metal organic vapor phase epitaxial growth technique. The quantum well structures with an InGaAs well were grown on InP grating substrates. The use of the quantum well active layers gave rise to several characteristic properties such as a large gain difference of 45cm-1 between the TE-and the TM-mode, a narrow spectral linewidth of 900kHz, a small wavelength chirping width of 4Åunder the 2.4Gbps pulse current modulation, and an increase in resonant frequency.View full abstractDownload PDF (960K) -
Kiyoshi OHNAKA, Hiraaki TSUJII, Jun SHIBATA1988 Volume 16 Issue 11 Pages 784-790
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSSemiconductor laser for use in optoelectronic integrated circuits has been developed. A ridge waveguide laser using the same layer with the heterojunction bipolar transitor (HBT) have been successfully integrated on a semi-insulating InP substrate. The n-cladding layer of the laser and the base of the HBT are the same epitaxial layers. This new structure has a small surface step and its fabrication process is very simple.
The threshold current of the ridge-waveguide laser is 30mA, and the characteristic temperature 65K. Since the HBT has an additional narrow band gap layer at the collector side of the base. Early effect is not observed.
This paper describes an analysis of the characteristics of the ridge-waveguide laser and the HBT, fabrication, and the operation of the optoelectronic integrated circuit.View full abstractDownload PDF (823K) -
Takashi JIMBO, Tetsuo SOGA, Masayoshi UMENO1988 Volume 16 Issue 11 Pages 791-796
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSDH, MQW and TJS lasers are fabricated on Si substrate by MOCVD. The characteristics are examined at room temperature by pulse current of excitation. The lowest threshold current 115mA is obtained with a MQW structure. The characteristics are still slightly inferior to the ones on GaAs substrate, but would make possible the integration of Si electronics with high-speed opto-electronic functions in the near future.View full abstractDownload PDF (530K) -
Kazuhisa UOMI, Naoki CHINONE1988 Volume 16 Issue 11 Pages 797-803
Published: November 28, 1988
Released on J-STAGE: February 26, 2010
JOURNAL FREE ACCESSIn this paper, we discuss the high speed modulation semiconductor lasers. Among them, emphasis is placed on the relaxation oscillation frequency which determine the intrinsic upper limit for the direct modulation bandwidth. We demonstrated that modulation doped MQW lasers have superior properties for high bit rate optical communications such as high relaxation oscillation frequency and low spectral chirping.View full abstractDownload PDF (797K)
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