縮小投影エキシマレーザードーピングによるn型GaAsの選択的メタライゼーション

レーザードーピングによる選択的メタライゼーション

抄録

Resistless microfabrication of metallization of n-type GaAs formed by projection patterned doping using a KrF excimer laser is described. Silane (SiH₄) gas is used as a source material of the ntype dopant of GaAs. Copper thin films with a linewidth as narrow as 2.35 μm are deposited selectively on the doped region by electroplating using an aqueous CuSO₄ solution. By using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32X10^-5 Ωcm², which is one-thirtieth of that of conventional alloyed contacts.