抄録
The high power characteristics of broad stripe gain-guiding quantum well lasers are reported. Graded-index separate confinement heterostructure (GRIN-SCH) -type quantum well lasers are grown on 0.5°misoriented (111) B GaAs substrates by molecular beam epitaxy. The reduction in the optical power density on the facet and in the driving current density is effective for increasing the maximum output power. The maximum output power of 3.7 W has been attained by small optical confinement in the graded-index waveguide region and by using a long cavity of 750μm.
