リング色素レーザー吸収法によるRFシランプラズマ内のSi原子計測
1991 年 19 巻 7 号 p. 641-647
詳細
1991 年 19 巻 7 号 p. 641-647
The absorption profile of the Si 288.2 nm line (3p2 1D2-3p4s 1P1) in a cw-RF SiH4 (10%) /Ar plasma generated in a plasma CVD chamber was determined by absorption spectroscopy using a ring dye laser. The Si atom density at the 3p2 1D2 level and the Si translational temperature were measured as functions of input power and total pressure in the cw-RF SiH4 (10%) /Ar plasma.
