Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors

Masato OHMUKAI; Hiroyoshi NAITO; Masahiro OKUDA; Kou KUROSAWA; Wataru SASAKI; Yasuo TAKIGAWA; Tatsuhiko MATSUSHITA; Yoshiaki TSUNAWAKI

doi:10.2184/lsj.20.12_970

Masato OHMUKAI, Hiroyoshi NAITO, Masahiro OKUDA, Kou KUROSAWA, Wataru SASAKI, Yasuo TAKIGAWA, Tatsuhiko MATSUSHITA, Yoshiaki TSUNAWAKI

著者情報

キーワード: Silicon carbide, Argon excimer laser, Laser mirror, Mirror damage, Silicon precipitation

ジャーナルフリー

1992 年 20 巻 12 号 p. 970-979

DOI https://doi.org/10.2184/lsj.20.12_970

詳細

抄録

The effects of an argon excimer laser irradiation are studied on silicon carbide films which are deposited on sintered and pressed silicon carbide substrates by a low-pressure chemical vapor deposition (CVD) method. The SiC films consist of about 15μm size crystallites highly oriented in such a way that the surfaces are parallel to (110). X-ray photoelectron and Raman scattering spectroscopic examination show that amorphous silicon is precipitated in the surface layers of silicon carbide films by the laser irradiation. The precipitation mechanism is discussed.

責任著者(Corresponding author)

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