The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Generation of Ultrafast Pulse Train from Semiconductor Laser Diodes
Yoh OGAWAShin ARAHIRA
Author information
JOURNAL FREE ACCESS

1994 Volume 22 Issue 8 Pages 627-634

Details
Abstract
Passively mode-locked distributed-Bragg-reflector (DBR) lasers with an intracavity saturableabsorber were monolithically fabricated. A transform-limited pulse train with a durationof 3.5 ps has was successfully generated at a high repetition rate over 40 GHz. While maintainingthe transform-limited conditions, a wide lasing-wavelength tuning of 4 nm was achieved byinjecting a tuning current into the DBR section. When an active region current was increasedup to a few times the threshold, harmonic passive mode-locking was also observed. Terahertzratepulse generation has been successfully achieved, to our knowledge for the first time, froma one-chip optoelectric device. The DBR section was found to play significant role in generatingstable pulses without substructure, by providing frequency filtering that selects longitudinalmodes.
Content from these authors
© The Laser Society of Japan
Previous article Next article
feedback
Top