抄録
High-power InGaN single-quantum-well (SQW) structure blue/green light-emitting diodes (LEDs) with an output power of 3-5mW were fabricated. The continuous-wave operation of bluish-purple InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) was achieved at room temperature with a lifetime of 35 hours. The threshold current and the voltage of the LD were 80mA and 5.5V, respectively. By changing the indium composition of the InGaN well layers of the InGaN MQW LDs, the emission wavelength of the LDs was varied between 390nm and 440nm which was suitable for the application of a laser plant factory. Photocurrent spectra of the InGaN SQW LEDs were measured at room temperature. The energy differences between the absorption and the emission energy of the blue/green InGaN SQW LEDs were 290 and 570meV. Both spontaneous and stimulated emission originated from these deep localized energy states.
