Abstract
The advantages of pulsed laser deposition for oxide film growth and of molecular beam epitaxy for 2-dimensional film growth have been combined to develop a method for atomically controlled epitaxy of oxide thin films and heterojunctions. Molecular layer epitaxy has been verified by the clear observation of RHEED intensity oscillations for the growths of various oxides with perovskite, infinite-layer, rock salt, corundum, and fluorite structures. Epitaxial growth of BaO and sapphire films was achieved even at such a low temperature as 20°C. New structures with exotic properties were revealed in SrTiO3/SrVO3 superlattice, infinite-layer cuprates, and ZnO hexagonal platelets film. In view of the versatility and structure-sensitive properties of oxides, this lattice engineering technology by laser MBE is expected to open a new field of oxide electronics.
