Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies

Abstract

Laser spectroscopy and optical emission spectroscopy have been applied to analyses of neutral radicals influoro-carbon etching plasma for ULSI mass production, as a fundamental approach to development ofnext-generation etching technologies. Electron-impact dissociation processes of parent molecules in the plasmaand ion-assisted surface reactions of radicals on the top electrode, were analyzed to extract the ways ofcontrolling reaction selectivity of different materials. Radial spatial distributions of radicals were measured todiscuss the technical issues of development of larger-diameter wafer processes. These show that the absolutedensities and spatial distributions are indispensable to quantitatively understand phenomena directly related toetching reaction.