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Volume 26, Issue 6
Displaying 1-15 of 15 articles from this issue
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Yoichi FUJII1998 Volume 26 Issue 6 Pages 413
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
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On the Special Issue of Applications to Semiconductor Processing of Lasers and Synchrotron RadiationToshio GOTO1998 Volume 26 Issue 6 Pages 414
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
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toward the Fabrication of Laser Crystals on Si SubstratesKyoichi ADACHI, Mizunori EZAKI, Minoru OBARA, Hiroshi KUMAGAI, Katsumi ...1998 Volume 26 Issue 6 Pages 415-420
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSOEIC (Optoelectronic integrated circuit) which interconnects various optical and electronic elements on thesame substrate, is a promising device in near future. The fabrication method ofoptical waveguides is desirableto be a vapor phase epitaxy and suitable for in situ processing. LPE (Liquid Phase Epitaxy) methods arewidely used to fabricate thin films, but recently much attention has been paid to PLD (Pulsed Laser Deposition) methods in the fabrication of optical thin films with various advantages such as adaptability to in-situ, processing, simple arrangement, stoichiometry of the films, epitaxial quality of complicated compoundmaterials as good as those by MBE (Molecular Beam Epitaxy) and MOCVD (Metal-Organic Chemical Vapor Deposition). In the present paper, it is experimentally shown that this PLD method is very effective andaffordable as fabrication techniques of these optical thin films.View full abstractDownload PDF (1245K) -
Masaru SASAGO, Takeshi OHFUJI, Kouichi KUHARA1998 Volume 26 Issue 6 Pages 421-424
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSKrF/ ArF excimer laser lithography technique are expected to realize 1-4 Gbit DRAMs below 0.25μm designrules. Although KrF lithography is extendable for less than 0.2 μm patterning, the introduction of ArF lithography is much simple solution, if the infrastructures of ArF lithography are available. To realize ArFlithography in mass production, the development of ArF resists, exposure tools, and masks are important.Regarding ArF resists, practical chemically amplified resist has been developed with alicyclic polymers. Thedevelopment of dry-developed processes using silylation techniques also improves the resolution. Thecombination of recent ArF resist, anti-reflecting coating and attenuating phase shifting mask can producedevice patterns with a 0.12 μm design rule. The use of TSI can produce 0.09μm Line & Space (L&S) patternswith Levenson phase shift mask. These results imply that ArF lithography can be used for multi-generation indevice manufacturing. ArF lithography will be introduced in mass production as post-KrF lithography in thenear future.View full abstractDownload PDF (1604K) -
Naoshi ITABASHI, Hisataka HAYASHI, Tetsuya TATSUMI, Mitsuru OKIGAWA, H ...1998 Volume 26 Issue 6 Pages 425-432
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSLaser spectroscopy and optical emission spectroscopy have been applied to analyses of neutral radicals influoro-carbon etching plasma for ULSI mass production, as a fundamental approach to development ofnext-generation etching technologies. Electron-impact dissociation processes of parent molecules in the plasmaand ion-assisted surface reactions of radicals on the top electrode, were analyzed to extract the ways ofcontrolling reaction selectivity of different materials. Radial spatial distributions of radicals were measured todiscuss the technical issues of development of larger-diameter wafer processes. These show that the absolutedensities and spatial distributions are indispensable to quantitatively understand phenomena directly related toetching reaction.View full abstractDownload PDF (1494K) -
Morihisa HOGA, Norio SAITOU1998 Volume 26 Issue 6 Pages 433-437
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSThe design rule of semiconductor devices are rapidly shrinking and its densities are increasing. It was 1.2 μmin mid-1980's, and became 0.5 μm in early 1990 and the devices of 0.25 μm design rule are now produced. The lithography technology plays an important role in the trend of device shrinking and density increasing. The development of lithography technology is always supported by the metrology using laser beam. The lasertechnology, so far, overwhelmed the severe requirements of the accurate lithography. The laser technologiesin lithography are classified into three categories. They are the overlay measurement, the critical dimensionmeasurement and the defect inspection. The overlay metrology consists of the absolute placement andalignment measurement. The principles and the example of the typical systems are introduced.View full abstractDownload PDF (758K) -
Present Status and Future ProspectsTsuneo URISU1998 Volume 26 Issue 6 Pages 438-443
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSThe synchrotron radiation (SR) stimulated process is a new research field, of which studies started about 13 years ago. Up to now, experiments have been conducted mainly aiming the application to semiconductorprocesses and new material synthesis. In this report, after reviewing recent results of several SR stimulatedprocess experiments such as etching, chemical vapor deposition, epitaxial growth, and site specific processes, an application to the nano structure fabrications-nanometric process-is descrived as a future prospective one.View full abstractDownload PDF (1268K) -
Masanori OKUYAMA1998 Volume 26 Issue 6 Pages 444-448
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSMaterial processes related to semiconductor device manufacturing in research project in synchrotron radiationfacility, SPring-8, have been discussed. SPring-8 has 61 beamlines including 23 bending magnet beamlinesand 38 insertion device beamlines. Soft X-ray beamline in SPring-8 will be available for the materialprocessing near future and has 8-figure undulator which radiates strong polarized soft X-ray in energy range of 0.5-5 keV. Possibilities of the SR research are discussed showing the reported results. Research plans such as SR-CVD, SR-etching, surface modification, SR-ablation and their analyses have been proposed as effectivesubjects.View full abstractDownload PDF (889K) -
Masaharu SHIRATANI, Yukio WATANABE1998 Volume 26 Issue 6 Pages 449-452
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSA high sensitive photon-counting laser-light-scattering method for detection of nano-particles formed in CVDplasmas is developed to get information on nucleation and subsequent initial growth phase of particles. Size ofparticles is deduced from their diffusion after turning off discharge and their density is obtained using the sizeand absolute light scattering intensity. Using the developed method, we demonstrate detection of smallparticles down to a few nm in size and find the corresponding particle density is a high value of about 1011cm-3 even in low pressure silane RF discharges of low RF power, which are commonly used to deposit highquality thin films.View full abstractDownload PDF (730K) -
Akihiro KONO, Satoshi HIROSE, Toshio GOTO1998 Volume 26 Issue 6 Pages 453-457
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSThe behavior of the SiH2 radical in a RF (13.56 MHz) SiH4/SiH2Cl2 mixture plasma wasinvestigated usinglaser-induced fluorescence spectroscopy with pulsed as well as CW laser excitation. Itwas shown that SiH2 inthe mixture plasma is mainly produced via dissociation of SiH4 and it is less reactivewith SiH2Cl2 than with SiH4. The SiH2 density in the mixture plasma increased slightly with increasing SiH2Cl2 fraction, despite thedecrease in the SiH4 density. This enhanced decomposition of SiH4 as a result of SiH2Cl2 admixing was foundto be caused by the increase in the electron temperature, which resulted from the increase in the density ofelectron-attaching species produced from SiH2Cl2 in the plasma.View full abstractDownload PDF (834K) -
Koichiro MITSUKE, Masakazu MIZUTANI, Hiromichi NIIKURA, Kota IWASAKI1998 Volume 26 Issue 6 Pages 458-462
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSGas-phase N2 or N2O is photoionized with the fundamental light of an undulator radiationinto N2+ (X2Σg+, v″ =0) which is then probed by laser induced fluorescence excitation spectroscopy in thelaser wavelength regionof the (B2Σu+, v″=0) ← (X2Σg+, v″=0) transition at 389-392 nm. Thefluorescence excitation spectra of N2+exhibit two maxima due to the P and R branches in which rotational lines are heavily overlapped. By fixing thelaser wavelength at the maximum position of the P branch, partial cross sections forproduction of N2+ (X2Σg+, v″=0) are measured as a function of the undulator photon energy. The cross sectioncurve for N2+ from N2 or N2O shows peaks originating from transitions to autoionizing Rydberg states converging to N2+ (A2IIu, v=0 or 1) or to N2O+ (C2Σ+, v1=v2=v3=0), respectively.View full abstractDownload PDF (921K) -
Michio NIWANO, Nobuo MIYAMOTO1998 Volume 26 Issue 6 Pages 463-467
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSThe application of photochemical reaction for depositing SiC thin films fromorganosilicon compounds at lowtemperatures has been exploited. Methylsilane Si (CH3) 4, allylmethylsilane CH2=CHCH2Si (CH3) 3 andtriethylsilane SiH (C2H5) 3 are utilized as precursors for the deposition of SiC films. Synchrotron radiation (SR) in the vacuum-ultraviolet (VUV) region are used as the exciting light source. We usephoton-stimulateddesorption (PSD) and infrared (IR) spectroscopy to follow chemical changes of condencedlayers of organosiliconcaused by UV and VUV-SR irradiation. PSD data demonstrate that UV and VUV irradiation initiates thedesorption of hydrogen and carbon fragments, an indication that the photofragmentation of the organosilicon compounds occur upon UV and VUV irradiation. IR data show that Si-containing photofragments arepolymerized to form amorphous SiC.View full abstractDownload PDF (893K) -
Masaru FUKUSHIMA, Takashi ISHIWATA, Kinichi OBI1998 Volume 26 Issue 6 Pages 468-472
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSLaser induced fluorescence (LIF) excitation spectra of the A2Δ-X2II transition of SiHhave been measured insupersonic free expansions. We observed the eight vibronic bands, 0-0, 1-0, 0-1, 1-1, 2-1, 1-2, 2-2, and 2-3, thethree Δv=-1 bands of which were observed for the first time. The Δv=0 sequencedominates the spectra, because of favorable Franck-Condon (F-C) factors. On the other hand, the intensities ofthe Δv=- 1transitions are much weaker than those of the Δv=+1 transitions in spite of theconsiderable intensity of Δv=-1expected from the calculated F-C factors. This behavior is interpreted in terms of the transition momenthaving the strong dependence on internuclear distance.View full abstractDownload PDF (797K) -
Prospect of Inertial Fusion Energy and International CollaborationMasakatsu MURAKAMI, Tatsuhiko YAMANAKA1998 Volume 26 Issue 6 Pages 473-475
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
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Takeshi NAMIOKA1998 Volume 26 Issue 6 Pages 476-480
Published: June 15, 1998
Released on J-STAGE: August 25, 2010
JOURNAL FREE ACCESSDownload PDF (763K)
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