1998 Volume 26 Issue 6 Pages 463-467
The application of photochemical reaction for depositing SiC thin films fromorganosilicon compounds at lowtemperatures has been exploited. Methylsilane Si (CH3) 4, allylmethylsilane CH2=CHCH2Si (CH3) 3 andtriethylsilane SiH (C2H5) 3 are utilized as precursors for the deposition of SiC films. Synchrotron radiation (SR) in the vacuum-ultraviolet (VUV) region are used as the exciting light source. We usephoton-stimulateddesorption (PSD) and infrared (IR) spectroscopy to follow chemical changes of condencedlayers of organosiliconcaused by UV and VUV-SR irradiation. PSD data demonstrate that UV and VUV irradiation initiates thedesorption of hydrogen and carbon fragments, an indication that the photofragmentation of the organosilicon compounds occur upon UV and VUV irradiation. IR data show that Si-containing photofragments arepolymerized to form amorphous SiC.