TiN film for Transparent Conductors Formed by Pulsed Laser Deposition in Reactive Gas

Abstract

A titanium nitride film for a transparent conductor was formed on a SiO₂ substrate at room temperature by using a pulsed laser deposition method. The ablation is promoted from a Ti target with KrF excimer laser irradiation in an N₂ ambient gas. The structure of the film measured by using XRD was mainly TiN polycrystalline. In the case of the film thickness thinner than the wavelength of visible light, the transmittance and sheet resistance of the films were in the range of 74-47 % and 1000-70Ω/_??_, respectively.