Abstract
Several candidates for 0.1-μm generation of lithography may be used on semiconductor production lines. Of particular note is EUVL, which has the potential to handle feature sizes from 0.1 μm all the way down to 0.01 μm. We have designed 3-aspherical-mirror optics that meet the specifications for 0.1-μm generation lithography, and are developing an EUVL laboratory tool suitable for device fabrication experiments. This paper describes the status of EUV Lithography and design concepts and individual technologies we have developed.
