抄録
Recent progress of ecologically friendly metal-silicide semiconductor research is presented. β-FeSi2, which isa direct bandgap semiconducting material with an energy gap of 0.87 eV, is shown to be one of the candidatematerials for future optoelectronic and energy devices from ecological and resource viewpoints. Variousfabrication methods of β-FeSi2 and its recent device applications are introduced. Other interesting metalsilicidematerials are also discussed.
