Abstract
We have grown single-crystalline β-FeSi2 spheres embedded in Si by reactive deposition epitaxy (RDE), andfollowing molecular beam epitaxy (MBE), and investigated the effect of high temperature annealing on the β-FeSi2 1.5μm photoluminescence (PL) intensity. We found that 900°C annealing was a very effective wayto enhance the 1.5μm PL from β-FeSi2. The PL peak intensity became about 5 times larger than that of the asgrownsample, after annealing at 900°C for 42 h. This was attributed to improvement of the β-FeSi2 quality. Thermal quenching of the 1.5μm PL was also improved, in particular, at high temperatures above 100 K.
