The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 28, Issue 2
Displaying 1-13 of 13 articles from this issue
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  • [title in Japanese]
    Koichi TOYODA
    2000 Volume 28 Issue 2 Pages 75
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.75
    JOURNAL FREE ACCESS
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  • Preface for the Special Issue of Ecologically Friendly Metal-Silicide Semiconductor Research for Future Optoelectronics
    Kiyoshi MIYAKE, Yunosuke MAKITA
    2000 Volume 28 Issue 2 Pages 76
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.76
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  • Current Status of Ecologically Friendly Metal-Silicide Semiconductor Research
    Kiyoshi MIYAKE, Yunosuke MAKITA, Tsuyoshi YOSHITAKE
    2000 Volume 28 Issue 2 Pages 77-81
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.77
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    Recent progress of ecologically friendly metal-silicide semiconductor research is presented. β-FeSi2, which isa direct bandgap semiconducting material with an energy gap of 0.87 eV, is shown to be one of the candidatematerials for future optoelectronic and energy devices from ecological and resource viewpoints. Variousfabrication methods of β-FeSi2 and its recent device applications are introduced. Other interesting metalsilicidematerials are also discussed.
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  • [title in Japanese]
    2000 Volume 28 Issue 2 Pages 81
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.81
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  • Developments in Semiconducting Silicides for Optoelectronic Applications
    Kevin P. HOMEWOOD
    2000 Volume 28 Issue 2 Pages 82-87
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.82
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    Semiconducting silicides offer a route to increasing the functionality of silicon and the development of newoptoelectronic and photovoltaic devices. The motivation behind this approach is discussed and the technologyplaced in the current context. We discuss the properties of the dominant material, iron disilicide, and considerhow these make it a potentially important material for several optoelectronic applications.
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  • Applications of Laser Processing to Ecologically Friendly Semiconductor
    Mitsugu HANABUSA
    2000 Volume 28 Issue 2 Pages 88-92
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.88
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    As ecologically friendly semiconductors became a target of intense investigations, the interest in pulsed laserdeposition (PLD), which is the most popular laser-based deposition technique today, has been renewed as apowerful tool to produce iron silicides, a typical ecologically friendly semiconductor material. PLD is characterizedby the non-equilibrium production of atoms from the laser target, which helps the crystallization of the disilicides. As a result, crystallized disilicides were produced even at room temperature by using a FeSi2 target. Anotheradvantage of PLD is its simplicity, which was fully utilized by using an iron target. In this case, single β-phasedisilicides were produced on the silicon substrate heated to 600°C to 700°C. In addition, PLD has beenproven to be an effective tool to fabricate photodetectors. The photosensitivity of the iron silicide/Siheterostructures produced by PLD increased dramatically when they were fabricated at 800°C. The sensitivitypeak was observed around 1040 nm with the illumination from the iron silicide. The sensitivity reached to0.27 A/W when the silicon side of the heterostructure was illuminated. The feasibility to fabricate solar cellsby PLD was discussed.
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  • Synthesis of β-FeSi2/n-Si Heterojunction and Its Photovoltaic Property
    Yoshihito MAEDA, Kiyoshi MIYAKE, Kenya OHASHI
    2000 Volume 28 Issue 2 Pages 93-98
    Published: February 15, 2000
    Released on J-STAGE: August 04, 2010
    DOIhttps://doi.org/10.2184/lsj.28.93
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    We have succeeded in synthesis of continuous polycrystalline β-FeSi2 with large grains on n-type Si (001) substrates using a triple implantation of 56Fe+ ion at room temperature (RT). The RT ion-implantation caninduce a large number of defect to the Si surface, so that β-FeSi2 growth can be acceleratedby radiationenhanced diffusion of Fe and Si atoms. The synthesised β-FeSi2 showed a clear junction with Si (001). Weobserved its p-type semiconduction and a large hole mobility of 440 cm2/Vs at 280 K. Pronounced photoluminescenceat 0.80 eV was observed at 10 K. The heterojunction showed good photovoltaic spectral responsesto near band-gap light of 1.55μm. These suggest that β-FeSi2 is one of promising Si-based semiconductors for IR photodetectors. We confirmed that the ion-beam synthesised p-n heterojunction can work sufficiently as an IR photodetector at RT.
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  • Fabrication of β-FeSi2 Spheres Embedded in Si by Molecular Beam Epitaxy and Enhancement of the Infrared Photoluminescence by High Temperature Annealing
    Takashi SUEMASU, Yusuke IIKURA, Kenichiro TAKAKURA, Fumio HASEGAWA
    2000 Volume 28 Issue 2 Pages 99-102
    Published: February 15, 2000
    Released on J-STAGE: August 04, 2010
    DOIhttps://doi.org/10.2184/lsj.28.99
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    We have grown single-crystalline β-FeSi2 spheres embedded in Si by reactive deposition epitaxy (RDE), andfollowing molecular beam epitaxy (MBE), and investigated the effect of high temperature annealing on the β-FeSi2 1.5μm photoluminescence (PL) intensity. We found that 900°C annealing was a very effective wayto enhance the 1.5μm PL from β-FeSi2. The PL peak intensity became about 5 times larger than that of the asgrownsample, after annealing at 900°C for 42 h. This was attributed to improvement of the β-FeSi2 quality. Thermal quenching of the 1.5μm PL was also improved, in particular, at high temperatures above 100 K.
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  • Film Structure of β-FeSi2 Thin Films Prepared by Pulsed Laser Deposition Using an FeSi2 Alloy Target
    Tsuyoshi YOSHITAKE, Tatsuya NAGAMOTO, Gousuke SHIRAISHI, Kunihito NAGA ...
    2000 Volume 28 Issue 2 Pages 103-107
    Published: February 15, 2000
    Released on J-STAGE: August 04, 2010
    DOIhttps://doi.org/10.2184/lsj.28.103
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    Iron disilicide thin films were prepared by pulsed laser deposition on Si (100) substrates using an FeSi2 alloytarget. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. Inaddition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400°C and 600°C. This is attributed to the mobility enhancement of Si atoms. At 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both theFe and Si atoms. The films deposited at more than 700°C were grown epitaxially on Si (100) with the relationof β-FeSi2 (041) or (014) II Si (220) at the beginning of deposition. As the film thickness increases, the epitaxialgrowth becomes disordered and finally becomes non-oriented near the film surface. The generation of irondesilicides in PLD method is also discussed.
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  • Laser Ablation Growth of β-FeSi2 Film and Its Characterization
    Hirofumi KAKEMOTO, Yunosuke MAKITA, Shiro SAKURAGI, Takeyo TSUKAMOTO
    2000 Volume 28 Issue 2 Pages 108-111
    Published: February 15, 2000
    Released on J-STAGE: August 04, 2010
    DOIhttps://doi.org/10.2184/lsj.28.108
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    Beta-iron disilicide β-FeSi2 films were prepared on Si (100) substrates by laser ablation method using β-FeSi2 bulk crystals as target materials. XRD patterns of β-FeSi2 films on Si (100) substrates showed [110] orientation. Raman signals of β-FeSi2 films were observed at 171cm-1, 190cm-1, 199cm-1 and 247cm-1. Thestress between β-FeSi2 film and Si (100) substrate was estimated to be about 0.2 GPa. The optical absorptioncoefficient at 1.0 eV and energy band-gap were obtained to be 2.0×105cm-1 and 0.85 eV, respectively.
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  • Thickness Measurement of Thin Metal Plates by Laser-Induced Thermal Elastic Wave
    Tetsuya TANIYAMA
    2000 Volume 28 Issue 2 Pages 112-116
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.112
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    The present paper describes experimental results of the thickness measurements of aluminum andcopperplates in which thermal elastic wave detect by PZT is produced by continual irradiation of 10.6 μm lasersbeam. The phase difference, between thermal elastic wave and laser beam varies with the chopping frequency.The thickness (e) of the plate is found reciprocally proportional to f0.5 where f denotes the chopping frequency corresponding to zero phase difference. The following results are obtained from the experiments usingaluminum and copper plates of 0.5-2.0 mm thick. (1) For aluminum e=1×10-4f-0.5 and for copper e=0.9×10-4f-0.52mm. (2) Accuracy of the measurements increases with the decrease in thickness of the plate.
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  • A Novel Laser Scanning Visualization System for Three-Dimensional Representation of Spray Flow-Vectors
    Tadayuki SUGIMORI, Kunio BABA, Yoshio ISHII, Yuzuru KUBOTA, Kazuhiro W ...
    2000 Volume 28 Issue 2 Pages 117-120
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.117
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    This paper describes a novel visualization technique for non-axisymmetric flows using a high speed laser beamscanner. Conical spray jet has been successfully visualized along its curved surface. A three-dimensional flowvector mapping is reconstructed from two-dimensional data imaged by a CCD camera. A specialsynchronization method between beam scan and CCD imaging is introduced to improve the time-resolution froma CCD fielding period of 16.7 ms down to 3 ms. Discussions on spatial- and time-resolutions which inherentlylies in this system are also given in terms of CCD imaging parameters and a time lag due to laser scanning.
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  • Fundamentals of Laser Spectroscopy III: Absorption and Reflection Spectroscopy
    Shinichi NAKASHIMA, Tadashi ITOH
    2000 Volume 28 Issue 2 Pages 121-126
    Published: February 15, 2000
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.28.121
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