抄録
A new structure of semiconductor laser which is designated as the transverse-junction-stripe (TJS) laser has been developed. In TJS laser, a very thin GaAs homojunction laser is sandwiched by GaAIAs layers. The minimum threshold current is 36mA at room temperature for continuous operation. The TJS laser shows the fundamental transverse mode up to three times of the threshold current and nearly single longitudinal mode.
