Abstract
Quantitative analysis of oxygen in polycrystalline silicon films doped with oxygen atoms was investigated with an ion microanalyzer. O+, SiO+ and Si2O+ ions were detected as secondary positive ions under 10 keV Ar+ ion bombardment. The detection sensitivities of SiO+ and Si2O+ ions were 10 times over that of O+ ions. The blank level of Si2O+ ions was smaller than that of SiO+ ions. A linear relation was obtained between the intensity ratio of Si2O+ to Si2+ and oxgen concentration determined by infrared spectroscopy.
