Journal of the Mass Spectrometry Society of Japan
Online ISSN : 1880-4225
Print ISSN : 1340-8097
ISSN-L : 1340-8097
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Mass Spectrometric Analysis of Synthetic Polymers Using Desorption/Ionization on Porous Silicon (DIOS)
—Optimal Etching Conditions for DIOS Chips—
Shoji OKUNOYukiyasu SHIMOMAEKazuma OHARAHiroki FUJIWARAJun OHYAMAMasayoshi OHMOTOYoshinao WADARyuichi ARAKAWA
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2004 Volume 52 Issue 3 Pages 142-148

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Abstract

Desorption/ionization on porous silicon (DIOS) is a novel matrix-free variant of laser desorption/ionization (LDI) techniques for mass spectrometry. The DIOS chips are produced by electrochemical etching of silicon wafers under light exposure. In the present report, the optimal conditions, regarding resistivity of silicon wafer, etching current density and etching time, for making DIOS chip with better ionization performance are described. In addition, the DIOS mass spectra of various synthetic polymers including polyethyleneglycol, nonylphenolpolyethoxylate, nonylphenolpolyethoxylatesulfate, polymethylmethacrylate are compared with the matrix-assisted LDI mass spectra.

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© 2004 by The Mass Spectrometry Society of Japan
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