Depth Profile of Phosphorus and Arsenic in Polycrystalline Si/SiO₂/Si Structure

Abstract

Phosphorus and arsenic profiles in polycrystalline Si-SiO₂-Si structures were studied by ion microanalyzer, sup Pressed of edge effects by electronic gating. The Pand As diffused in the poly-Si layer were very uniform and had atendency of pile-up at the ierface of poly-Si-Sio₂. The oxides of highly doped poly-Si contained the same level of Pas in the poly-Si and in the case of As one-tenth of the initial concentration in the poly-Si layer.