Energy and Mass Analyses of Secondary Positive Ions from Silicon Wafer Surfaces

Shunroku Taya

doi:10.5702/massspec1953.26.89

Shunroku Taya

Author information

Keywords: SIMS, Energy distribution, Silicon wafer, Double focusing mass spectrometer, Solid surface analysis

JOURNAL FREE ACCESS

1978 Volume 26 Issue 1 Pages 89-95

DOI https://doi.org/10.5702/massspec1953.26.89

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Published: March 31, 1978 Received: November 16, 1977 Available on J-STAGE: June 28, 2010 Accepted: - Advance online publication: - Revised: -
Correction information
Date of correction: June 28, 2010 Reason for correction: - Correction: AFFILIATION Details: Wrong :
1) Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185 Japan

Right :
1) Central Research Laboratory, Hitachi Ltd.

Date of correction: June 28, 2010 Reason for correction: - Correction: KEYWORD Details: Wrong : SIMS Energy distribution Silicon wafer Double focusing mass spectrometer Solid surface analysis
Right : SIMS, Energy distribution, Silicon wafer, Double focusing mass spectrometer, Solid surface analysis

Date of correction: June 28, 2010 Reason for correction: - Correction: CITATION Details: Wrong : E
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Right : S. Taya, H. Tsuyama, I. Kanomata, T. Noda and H. Matsuda, Int. J. Mass Spectrom. Ion Phys., 26, (1978)77.
S. Taya, M. Suzuki, H. Tsuyama and I. Kanomata, Int. J. Mass Spectrom. Ion Phys. in press.
S. Taya, H. Tsuyama, M. Itoh, and I. Kanomata, Mass Spectroscopy(Japan), 25(1977)251.
H. E. Stanton, J. Appl. Phys., 31(1960)678.
K. Nakamura, H. Tamura and T. Koncio, japan J. Appl. Phys., 13(1974)917.
Z. Sroubek, Surface Sci., 44(1974)47.
H. Doi, I. Kanomata, and N. Sakudo, 7th Conference on Solid State Devices, Tokyo, Japan J. Appl. Phys., 15(1976)Suppl. 15-1, 71.
T. Ishitani, H. Tamura and T. Shinmiyo, Surface Sci., 55(1976)179.
M. Someno, H. Saito and M. Kobayashi, Mass Spectroscopy(Japan), 24(1976)173.

Date of correction: June 28, 2010 Reason for correction: - Correction: PDF FILE Details: -

Abstract

The kinetic energy distribution of ions liberated from a silicon wafer surface was measured. The primary ion was 8 keV O⁺. The energy distribution was analyzed using electric toroidal sector(re=212mm, φe=85°, c=0.5). Two new sharp energy peaks have been observed immediately below a giant sputtered ion peak. These energetically discrete sputtered ions were analyzed with a double focusing mass spectrometer. From the results of SIMS analyses, ions of the lowest energy peak have been identified as the ambient gas ions, ions of the next higher energy peak as those from the top surface, and ions of the giant energy peak as those from the bulk.

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