Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B2O3 Flux

Kazuki Tajima; Takuma Ogasawara; Takayuki Narushima; Chiaki Ouchi; Yasutaka Iguchi

doi:10.2320/matertrans.42.2434

Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B₂O₃ Flux

Kazuki Tajima, Takuma Ogasawara, Takayuki Narushima, Chiaki Ouchi, Yasutaka Iguchi

著者情報

キーワード: oxygen, boron oxide, gallium oxide, gallium, gallium arsenide, equilibrium, interaction parameter, distribution, thermodynamics

ジャーナルフリー

2001 年 42 巻 11 号 p. 2434-2439

DOI https://doi.org/10.2320/matertrans.42.2434

詳細

抄録

The equilibrium between Ga–As melt, containing arsenic up to 5 mass%, and B₂O₃ flux was investigated from 1273 to 1523 K in a silica ampoule. The effect of arsenic on equilibrium contents of oxygen, boron and silicon in the melt was investigated. The results were analyzed using interaction parameters. The equilibrium distribution ratio of oxygen between Ga–As melt and B₂O₃ flux decreased with the increase of temperature, Ga₂O₃ content in the flux and arsenic content in the melt. The activity of Ga₂O₃ in the B₂O₃ flux was determined in the temperature range from 1273 to 1523 K, which is relevant to the practical process of crystal growth of GaAs.

責任著者(Corresponding author)

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