2001 年 42 巻 4 号 p. 702-706
BaTiO3 films were prepared on fused silica substrates by metal-organic chemical vapor deposition (MOCVD). Effect of deposition conditions on the composition, structure and morphology were studied. Thermodynamic calculations well predicted the relationship between deposition conditions and the phases of deposits. BaTiO3 films in a single phase were obtained at 973 K and Ba/Ti ratio in the source gas of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 film in thickness of about 1 \\micron had a relative dielectric constant of 480. The dielectric constant of the BaTiO3 film showed the maximum value of 530 at 360 K.
