2001 年 42 巻 8 号 p. 1638-1640
Metal or metal-oxide nanocrystals can be formed by the gas deposition method. Here we report a modified gas deposition method, by which nanocrystals of metal oxides are synthesized at first, and transformed into metal nanocrystals by heating the carrying gas. By controlling the heating temperature we can selectively deposit either dielectric films or conductive films in the same deposition process. Demonstrative experiments for transforming Al2O3 nanocrystals into Al nanocrystals are shown.