Interface Formation and Phase Distribution Induced by Co/SiC Solid State Reactions

抄録

Interface formation and phase distribution by the solid-state reactions between thin sputtered cobalt films and SiC were studied at temperatures between 1023 and 1723 K for various times. The reaction with the formation of silicides and carbon was first observed above 1123 K. At 1323 K, and as the reaction proceeded, the initially formed Co₂Si layer converted to CoSi. The deposited cobalt thin film reacted completely with SiC after annealing at 1323 K for 0.5 h. The thermodynamically stable CoSi is the only observed silicide in the reaction up to 1723 K. A reaction model and a thermodynamic argument are proposed to interpret the interface formation and phase distribution of this system.