2002 年 43 巻 9 号 p. 2169-2172
Dislocation structures developed in hinge-type plastic zones associated with cracks in silicon crystals have been studied using a high voltage electron microscope (HVEM). Fine slip bands due to those dislocations have been also examined by an atomic force microscope (AFM). {100} and {110} cracks were introduced into {110} silicon wafers at room temperature by Vickers indentation method. The temperature of the wafer chips indented was raised to higher than 823 K to activate dislocations around crack tips under a residual stress due to the indentation. In specimens with the heat-treatment, prominent dislocation arrays corresponding to the hinge-type plastic zone were observed not only near the crack tip but also in the crack wake. AFM observations showed that very fine slip bands with the step height of a few nano-meters were formed with the regular spacing of a few microns. Based on the analyses of those dislocations and slip bands, it has been revealed that those dislocations were shielding-type increasing the fracture toughness.
